Authors: Fengdeng Liu, Zhifei Yang, David Abramovitch, Silu Guo, K. Andre Mkhoyan, Marco Bernardi, Bharat Jalan

Published on: May 14, 2024

Impact Score: 7.2

Arxiv code: Arxiv:2405.08915

Summary

• What is new: The paper presents a novel approach to achieve both high transparency and high conductivity in ultra-wide bandgap (UWBG) semiconductors using a thin heterostructure design.
• Why this is important: Finding a semiconductor that maintains high transparency to DUV wavelengths while being highly conductive with good mobility at room temperature.
• What the research proposes: Using a heterostructure of SrSnO3/La:SrSnO3/GdScO3 (110) with electrostatic gating to manage carrier density and mobility, ensuring transparency and conductivity.
• Results: Achieved a carrier density modulation from 1018 cm-3 to 1020 cm-3, room temperature mobility from 40 to 140 cm2V-1s-1, and 85% optical transparency at a 300 nm wavelength.

Technical Details

Technological frameworks used: nan

Models used: First principles calculations for phonon-limited mobility, experimental setup for testing transparency and conductivity.

Data used: Carrier density, mobility measurements, optical transparency data

Potential Impact

Markets in high-power electronics and deep-ultraviolet optoelectronics, potentially impacting companies developing UV sterilization tools and high-power electronic devices.

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