Authors: Pieter Cardinael, Sachin Yadav, Herwig Hahn, Ming Zhao, Sourish Banerjee, Babak Kazemi Esfeh, Christof Mauder, Barry O Sullivan, Uthayasankaran Peralagu, Anurag Vohra, Robert Langer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin

Published on: April 03, 2024

Impact Score: 7.4

Arxiv code: Arxiv:2404.02707

Summary

• What is new: Revealing and controlling the SiC_xN_y interfacial layer to reduce RF losses for 5G/6G applications.
• Why this is important: High RF losses at the AlN/Si interface in GaN-on-Si HEMT stacks, due to parasitic surface conduction.
• What the research proposes: Modulating the TMAl predose to tweak the C composition at the AlN/Si interface, balancing the interface charge.
• Results: Achieved RF loss below 0.3 dB/mm at 10 GHz with an effective resistivity above 8 kΩ·cm.

Technical Details

Technological frameworks used: MOCVD for AlN/Si growth, C-V and I-V characterisation

Models used: Linear relationship between TMAl predose and net interface charge

Data used: Electrical and physical descriptions of AlN/Si structures

Potential Impact

5G/6G telecom sector, semiconductor fabrication businesses, RF component manufacturers

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