Authors: Jeffrey A. Cloninger, Raine Harris, Kristine L. Haley, Randy M. Sterbentz, Takashi Taniguchi, Kenji Watanabe, Joshua O. Island

Published on: February 06, 2024

Impact Score: 8.15

Arxiv code: Arxiv:2402.03611

Summary

• What is new: This research introduces a novel double Schottky barrier model applied to van der Waals transistors, using graphene contacts.
• Why this is important: The challenge addressed is the Fermi-level pinning in contacted semiconductors, which hampers device performance.
• What the research proposes: The proposed solution is the use of a double Schottky barrier model on all van der Waals transistors to enable tunable Schottky barriers.
• Results: The model successfully extracts Schottky barrier heights in agreement with the Schottky-Mott rule and demonstrates in-situ tunability using a contact gate.

Technical Details

Technological frameworks used: nan

Models used: Double Schottky barrier model

Data used: Two-terminal current-voltage measurements at room temperature

Potential Impact

Semiconductor manufacturing, electronics companies focusing on transistors and barristors technology

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