Authors: Kaifei Kang, Bowen Shen, Yichen Qiu, Kenji Watanabe, Takashi Taniguchi, Jie Shan, Kin Fai Mak

Published on: February 05, 2024

Impact Score: 8.22

Arxiv code: Arxiv:2402.03294

Summary

• What is new: Discovery of a fractional Quantum spin Hall (QSH) insulator in 2.1-degree-twisted bilayer MoTe2, differing from the integer QSH insulators known previously.
• Why this is important: Existing research on QSH insulators has been limited to integer conductance states, overlooking potential fractional states.
• What the research proposes: Investigated transport properties of 2.1-degree-twisted bilayer MoTe2, identifying a fractional QSH state with unexpected conductance levels.
• Results: Identified a fractional QSH state at filling factor v = 3 with conductance of 3/2 G0 and integer states at v = 2, 4, and 6 with conductances of G0, 2G0, and 3G0 respectively, opening up new avenues in topological phases research.

Technical Details

Technological frameworks used: Transport evidence and experimental studies in twisted bilayer MoTe2

Models used: Fractional and integer Quantum spin Hall insulator models

Data used: Conductance measurements at various filling factors of the moiré valence bands

Potential Impact

Semiconductor industry, electronic materials manufacturers, quantum computing firms

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