Authors: Peng Lei, Mingyu Xu, Yunhui Bai, Zhangyuan Chen, Xiaopeng Xie
Published on: February 04, 2024
Impact Score: 8.22
Arxiv code: Arxiv:2402.02409
Summary
- What is new: Introduced a suspended nanowire structure with a novel fabrication technique.
- Why this is important: Difficulty in confining optical and acoustic waves in integrated Brillouin devices.
- What the research proposes: A suspended nanowire structure that can confine photons and phonons, with a CMOS-compatible fabrication technique.
- Results: Achieved a Brillouin gain coefficient of 1100 1/W/m, with a significant Brillouin net gain over 4.1 dB.
Technical Details
Technological frameworks used: CMOS technology
Models used: Suspended nanowire structure for SBS
Data used: Silicon-on-insulator platform
Potential Impact
Photonic integrated circuits manufacturers, data communication, and sensing industries.
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